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"GaN HEMT devices: Experimental results on normally-on, normally-off and ..."

Giuseppe Sorrentino et al. (2013)

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DOI: 10.1109/IECON.2013.6699239

access: closed

type: Conference or Workshop Paper

metadata version: 2019-10-28

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  - conf/iecon/SorrentinoMPPR13
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Giuseppe Sorrentino, Maurizio Melito, Alfonso Patti, Giovanni Parrino, Angelo Raciti:
GaN HEMT devices: Experimental results on normally-on, normally-off and cascode configuration. IECON 2013: 816-821

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