"Proposal and analysis of gate drive circuit suitable for GaN-FET."

Fumiya Hattori, Masayoshi Yamamoto (2012)

> Home

Details and statistics

DOI: 10.1109/IECON.2012.6388669

access: closed

type: Conference or Workshop Paper

metadata version: 2020-01-01

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/iecon/HattoriY12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/iecon/HattoriY12
Fumiya Hattori, Masayoshi Yamamoto:
Proposal and analysis of gate drive circuit suitable for GaN-FET. IECON 2012: 685-690

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.