"Hot Carrier Injection Induced Degradation of 14 nm FinFET under High ..."

Junru Qu et al. (2024)

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DOI: 10.1109/ICTA64028.2024.10860413

access: closed

type: Conference or Workshop Paper

metadata version: 2025-03-17

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Junru Qu, Jiabao Ye, Zhangbin Yang, Daixiao Peng, Xi Cai, Xueguang Lian, Yong Ding, Bing Chen:
Hot Carrier Injection Induced Degradation of 14 nm FinFET under High Source-Drain Voltage Bias. ICTA 2024: 176-177

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