"Characterization of atomic layer deposited low-k spacer for FDSOI high-k ..."

D. H. Triyoso et al. (2017)

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DOI: 10.1109/ICICDT.2017.7993500

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter:
Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. ICICDT 2017: 1-4

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