"Gate oxide trap characterization under DC and pulse stress."

Sangku Park et al. (2010)

> Home

Details and statistics

DOI: 10.1109/ICECS.2010.5724510

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-23

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/icecsys/ParkLRKSB10
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/icecsys/ParkLRKSB10
Sangku Park, Jaehoon Lee, Y. Ryu, J. Kang, B. So, Dohyun Baek:
Gate oxide trap characterization under DC and pulse stress. ICECS 2010: 289-292

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.