"Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for ..."

B. Mohan et al. (2024)

> Home

Details and statistics

DOI: 10.1109/ICDCS59278.2024.10560584

access: closed

type: Conference or Workshop Paper

metadata version: 2024-07-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/icdcs2/MohanPKP24
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/icdcs2/MohanPKP24
B. Mohan, J. Charles Pravin, M. Keerthi, P. Prajoon:
Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications. ICDCS 2024: 317-321

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.