"RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the ..."

Hritom Das et al. (2023)

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DOI: 10.1145/3583781.3590211

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-15

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Hritom Das, Manu Rathore, Rocco Febbo, Maximilian Liehr, Nathaniel C. Cady, Garrett S. Rose:
RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design. ACM Great Lakes Symposium on VLSI 2023: 281-286

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