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"Z²-FET used as 1-transistor high-speed DRAM."

Jing Wan et al. (2012)

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DOI: 10.1109/ESSDERC.2012.6343367

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-25

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  dblp key:
  - conf/essderc/WanRZC12
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  - https://dblp.org/rec/conf/essderc/WanRZC12
Jing Wan, Cyrille Le Royer, Alexander Zaslavsky, Sorin Cristoloveanu:
Z²-FET used as 1-transistor high-speed DRAM. ESSDERC 2012: 197-200

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