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"Random Telegraph Signal noise properties of HfOx RRAM in high resistive state."

Francesco Maria Puglisi et al. (2012)

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DOI: 10.1109/ESSDERC.2012.6343386

access: closed

type: Conference or Workshop Paper

metadata version: 2017-06-02

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  dblp key:
  - conf/essderc/PuglisiPPLB12
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  - https://dblp.org/rec/conf/essderc/PuglisiPPLB12
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker:
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state. ESSDERC 2012: 274-277

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