"Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory ..."

Hyungrock Oh et al. (2021)

> Home

Details and statistics

DOI: 10.1109/ESSDERC53440.2021.9631811

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/essderc/OhBPMRDDFKD21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/essderc/OhBPMRDDFKD21
Hyungrock Oh, Attilio Belmonte, Manu Perumkunnil, Jérôme Mitard, Nouredine Rassoul, Gabriele Luca Donadio, Romain Delhougne, Arnaud Furnémont, Gouri Sankar Kar, Wim Dehaene:
Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications. ESSDERC 2021: 275-278

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.