"In-depth electrical characterization of deca-nanometer InGaAs MOSFET down ..."

F. Serra Di Santa Maria et al. (2022)

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DOI: 10.1109/ESSDERC55479.2022.9947142

access: closed

type: Conference or Workshop Paper

metadata version: 2025-03-03

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F. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota:
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications. ESSDERC 2022: 257-260

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