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"Si tunneling transistors with high on-currents and slopes of 50 mV/dec ..."

Lars Knoll et al. (2012)

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DOI: 10.1109/ESSDERC.2012.6343356

access: closed

type: Conference or Workshop Paper

metadata version: 2018-11-02

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Lars Knoll, Qing-Tai Zhao, Stefan Trellenkamp, Anna Schäfer, K. K. Bourdelle, Siegfried Mantl:
Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions. ESSDERC 2012: 183-156

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