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"Physical modeling of the hysteresis in M0S2 transistors."
Theresia Knobloch et al. (2017)
- Theresia Knobloch
, Gerhard Rzepa, Yury Yu. Illarionov
, Michael Waltl
, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser
:
Physical modeling of the hysteresis in M0S2 transistors. ESSDERC 2017: 284-287
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