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"Physical understanding and optimization of resistive switching ..."

Jinfeng Kang et al. (2016)

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DOI: 10.1109/ESSDERC.2016.7599610

access: closed

type: Conference or Workshop Paper

metadata version: 2024-01-09

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  dblp key:
  - conf/essderc/KangHCZLHLLWG16
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  - https://dblp.org/rec/conf/essderc/KangHCZLHLLWG16
Jinfeng Kang, Peng Huang, Zhe Chen, Yudi Zhao, Chen Liu, Runze Han, Lifeng Liu, Xiaoyan Liu, Yangyuan Wang, Bin Gao:
Physical understanding and optimization of resistive switching characteristics in oxide-RRAM. ESSDERC 2016: 154-159

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