"GeSn Vertical Gate-all-around Nanowire n-type MOSFETs."

Yannik Junk et al. (2022)

> Home

Details and statistics

DOI: 10.1109/ESSDERC55479.2022.9947133

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/essderc/JunkFHDBHGBZ22
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/essderc/JunkFHDBHGBZ22
Yannik Junk, Marvin Frauenrath, Yi Han, Omar Concepción Diaz, Jin-Hee Bae, Jean-Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing-Tai Zhao:
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs. ESSDERC 2022: 364-367

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.