"Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET ..."

Quentin Hubert et al. (2012)

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DOI: 10.1109/ESSDERC.2012.6343389

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo:
Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. ESSDERC 2012: 286-289

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