"Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb ..."

M. Azzaz et al. (2015)

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DOI: 10.1109/ESSDERC.2015.7324765

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-11

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M. Azzaz, A. Benoist, Elisa Vianello, Daniele Garbin, Eric Jalaguier, Carlo Cagli, C. Charpin, Stefania Bernasconi, Simon Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, Philippe Candelier, Claire Fenouillet-Béranger, Luca Perniola:
Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization. ESSDERC 2015: 266-269

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