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"Impact of channel thickness scaling on the performance of GaN-on-Si RF ..."

AliReza Alian et al. (2022)

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DOI: 10.1109/ESSDERC55479.2022.9947147

access: closed

type: Conference or Workshop Paper

metadata version: 2023-08-19

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  dblp key:
  - conf/essderc/AlianRYPHPZEVYBKCP22
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  persistent URL:
  - https://dblp.org/rec/conf/essderc/AlianRYPHPZEVYBKCP22
AliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana ElKashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais:
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. ESSDERC 2022: 384-387

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