"A 16nm 128kB high-density fully digital In Memory Compute macro with ..."

Weijie Jiang et al. (2023)

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DOI: 10.1109/ESSCIRC59616.2023.10268774

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type: Conference or Workshop Paper

metadata version: 2025-10-07

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Weijie Jiang, Pouya Houshmand, Marian Verhelst, Wim Dehaene:
A 16nm 128kB high-density fully digital In Memory Compute macro with reverse SRAM pre-charge achieving 0.36TOPs/mm², 256kB/mm² and 23. 8TOPs/W. ESSCIRC 2023: 409-412

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