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"A Maximally Row-Parallel MRAM In-Memory-Computing Macro Addressing Readout ..."

Peter Deaville et al. (2021)

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DOI: 10.1109/ESSCIRC53450.2021.9567807

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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  dblp key:
  - conf/esscirc/DeavilleZCV21
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  - https://dblp.org/rec/conf/esscirc/DeavilleZCV21
Peter Deaville, Bonan Zhang, Lung-Yen Chen, Naveen Verma:
A Maximally Row-Parallel MRAM In-Memory-Computing Macro Addressing Readout Circuit Sensitivity and Area. ESSCIRC 2021: 75-78

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