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"A 65nm SRAM achieving 250mV retention and 350mV, 1MHz, 55fJ/bit access ..."
Sylvain Clerc et al. (2012)
- Sylvain Clerc, Fady Abouzeid, Gilles Gasiot, David Gauthier, Philippe Roche:
A 65nm SRAM achieving 250mV retention and 350mV, 1MHz, 55fJ/bit access energy, with bit-interleaved radiation Soft Error tolerance. ESSCIRC 2012: 313-316
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