"Scalable 0.35V to 1.2V SRAM bitcell design from 65nm CMOS to 28nm FDSOI."

Fady Abouzeid et al. (2013)

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DOI: 10.1109/ESSCIRC.2013.6649108

access: closed

type: Conference or Workshop Paper

metadata version: 2022-04-09

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Fady Abouzeid, Audrey Bienfait, Kaya Can Akyel, Sylvain Clerc, Lorenzo Ciampolini, Philippe Roche:
Scalable 0.35V to 1.2V SRAM bitcell design from 65nm CMOS to 28nm FDSOI. ESSCIRC 2013: 205-208

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