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"Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS ..."

Shun'ichiro Ohmi et al. (2021)

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DOI: 10.1109/DRC52342.2021.9467182

access: closed

type: Conference or Workshop Paper

metadata version: 2024-04-04

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  dblp key:
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Shun'ichiro Ohmi, Hiroki Morita, Masaki Hayashi, Akio Ihara, Jooyoung Pyo:
Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications. DRC 2021: 1-2

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