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"AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors ..."
James Spencer Lundh et al. (2022)
- James Spencer Lundh, Hannah N. Masten, Kohei Sasaki, Alan G. Jacobs, Zhe Cheng
, Joseph Spencer, Lei Chen, James C. Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Karl D. Hobart, Marko J. Tadjer:
AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. DRC 2022: 1-2
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