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"1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes."

Wenshen Li et al. (2018)

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DOI: 10.1109/DRC.2018.8442245

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-01

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  dblp key:
  - conf/drc/LiNHTSKJX18
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  - https://dblp.org/rec/conf/drc/LiNHTSKJX18
Wenshen Li, Kazuki Nomoto, Zongyang Hu, Nicholas Tanen, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing:
1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes. DRC 2018: 1-2

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