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"Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 ..."

Marc Jaikissoon et al. (2023)

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DOI: 10.1109/DRC58590.2023.10187115

access: closed

type: Conference or Workshop Paper

metadata version: 2023-11-12

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Marc Jaikissoon, Jung-Soo Ko, Eric Pop, Krishna C. Saraswat:
Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal. DRC 2023: 1-2

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