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"Top-gated atomic precision phosphorous doped silicon single electron ..."

Evan M. Anderson et al. (2019)

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DOI: 10.1109/DRC46940.2019.9046464

access: closed

type: Conference or Workshop Paper

metadata version: 2022-12-07

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  - conf/drc/AndersonMTSLKBC19
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Evan M. Anderson, Leon Maurer, Lisa A. Tracy, S. W. Smith, Ping Lu, Aaron M. Katzenmeyer, Andrew D. Baczewski, DeAnna M. Campbell, Michael T. Marshall, Dan R. Ward, Tzu-Ming Lu, Shashank Misra:
Top-gated atomic precision phosphorous doped silicon single electron transistor with low thermal budget gate dielectric. DRC 2019: 205-206

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