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"A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving ..."

Justin J. Kim, Wonho Lee, James F. Buckwalter (2023)

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DOI: 10.1109/BCICTS54660.2023.10310903

access: closed

type: Conference or Workshop Paper

metadata version: 2023-12-01

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Justin J. Kim, Wonho Lee, James F. Buckwalter:
A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination. BCICTS 2023: 171-174

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