"Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN ..."

Sourabh Khandelwal et al. (2019)

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DOI: 10.1109/BCICTS45179.2019.8972721

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-19

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Sourabh Khandelwal, Kevin Kellogg, Cole Hill, Hugo Morales, Larry Dunleavy, Gergana Drandova, Anita Pacheco, Jose Jimenez:
Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling. BCICTS 2019: 1-4

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