


default search action
"450 GHz fT SiGe: C HBT Featuring an Implanted Collector in a ..."
Alexis Gauthier et al. (2018)
- Alexis Gauthier, Julien Borrel

, Pascal Chevalier, Grégory Avenier, A. Montagné, M. Juhel, R. Duru, L.-R. Clément, C. Borowiak, Michel Buczko, Christophe Gaquière:
450 GHz fT SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node. BCICTS 2018: 72-75

manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.


Google
Google Scholar
Semantic Scholar
Internet Archive Scholar
CiteSeerX
ORCID













