"MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, ..."

Ryan Fang et al. (2022)

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DOI: 10.1109/BCICTS53451.2022.10051741

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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Ryan Fang, Dylan Ma, Ujwal Radhakrishna, Lan Wei:
MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects. BCICTS 2022: 21-24

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