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"Roles of the gate length and width of the transistors in increasing the ..."
Zhongshan Zheng et al. (2017)
- Zhongshan Zheng, Zhentao Li, Gengsheng Chen, Jiajun Luo, Zhengsheng Han:
Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells. ASICON 2017: 219-221
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