Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)."

Kazuo Tsutsui et al. (2017)

> Home

Details and statistics

DOI: 10.1109/ASICON.2017.8252681

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-21

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/asicon/TsutsuiKHNNWMSM17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/asicon/TsutsuiKHNNWMSM17
Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, Masaharu Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, H. Ohashi, Hiroshi Iwai:
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). ASICON 2017: 1137-1140

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.