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"A study on HCI induced gate leakage current model used for reliability ..."

Nobukazu Tsukiji et al. (2015)

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DOI: 10.1109/ASICON.2015.7516944

access: closed

type: Conference or Workshop Paper

metadata version: 2020-02-06

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  - conf/asicon/TsukijiAKTHK15
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Nobukazu Tsukiji, Hitoshi Aoki, Masaki Kazumi, Takuya Totsuka, Masashi Higashino, Haruo Kobayashi:
A study on HCI induced gate leakage current model used for reliability simulations in 90nm n-MOSFETs. ASICON 2015: 1-4

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