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"Low frequency noise characteristics in p-Type MOSFET with multilayer WSe2 ..."

Hui Shen et al. (2017)

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DOI: 10.1109/ASICON.2017.8252490

access: closed

type: Conference or Workshop Paper

metadata version: 2018-01-17

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  dblp key:
  - conf/asicon/ShenYBHH17
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Hui Shen, Huiwen Yuan, Sitong Bu, Mingyue He, Daming Huang:
Low frequency noise characteristics in p-Type MOSFET with multilayer WSe2 channel and Al2O3 back gate dielectric. ASICON 2017: 371-374

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