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"A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved ..."

Moufu Kong et al. (2023)

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DOI: 10.1109/ASICON58565.2023.10396229

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-07

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  dblp key:
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Moufu Kong, Zhi Lin, Hongfei Deng, Bo Yi, Rui Jin, Hongqiang Yang:
A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance. ASICON 2023: 1-4

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