BibTeX record journals/ieicet/EnomotoK11

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@article{DBLP:journals/ieicet/EnomotoK11,
  author       = {Tadayoshi Enomoto and
                  Nobuaki Kobayashi},
  title        = {A Large "Read" and "Write" Margins, Low Leakage Power, Six-Transistor
                  90-nm {CMOS} {SRAM}},
  journal      = {{IEICE} Trans. Electron.},
  volume       = {94-C},
  number       = {4},
  pages        = {530--538},
  year         = {2011},
  url          = {https://doi.org/10.1587/transele.E94.C.530},
  doi          = {10.1587/TRANSELE.E94.C.530},
  timestamp    = {Sat, 11 Apr 2020 14:47:42 +0200},
  biburl       = {https://dblp.org/rec/journals/ieicet/EnomotoK11.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
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