BibTeX record journals/chinaf/ZhangAHLZH18

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@article{DBLP:journals/chinaf/ZhangAHLZH18,
  author       = {Bingxin Zhang and
                  Xia An and
                  Xiangyang Hu and
                  Ming Li and
                  Xing Zhang and
                  Ru Huang},
  title        = {GeC film with high substitutional carbon concentration formed by ion
                  implantation and solid phase epitaxy for strained Ge n-MOSFETs},
  journal      = {Sci. China Inf. Sci.},
  volume       = {61},
  number       = {6},
  pages        = {069405:1--069405:3},
  year         = {2018},
  url          = {https://doi.org/10.1007/s11432-017-9264-0},
  doi          = {10.1007/S11432-017-9264-0},
  timestamp    = {Mon, 02 Mar 2020 16:30:50 +0100},
  biburl       = {https://dblp.org/rec/journals/chinaf/ZhangAHLZH18.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
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