BibTeX record conf/isscc/DongWL0SCCBS18

• > Home > conf/isscc/DongWL0SCCBS18

@inproceedings{DBLP:conf/isscc/DongWL0SCCBS18,
  author       = {Qing Dong and
                  Zhehong Wang and
                  Jongyup Lim and
                  Yiqun Zhang and
                  Yi{-}Chun Shih and
                  Yu{-}Der Chih and
                  Tsung{-}Yung Jonathan Chang and
                  David T. Blaauw and
                  Dennis Sylvester},
  title        = {A 1Mb 28nm {STT-MRAM} with 2.8ns read access time at 1.2V {VDD} using
                  single-cap offset-cancelled sense amplifier and in-situ self-write-termination},
  booktitle    = {2018 {IEEE} International Solid-State Circuits Conference, {ISSCC}
                  2018, San Francisco, CA, USA, February 11-15, 2018},
  pages        = {480--482},
  publisher    = {{IEEE}},
  year         = {2018},
  url          = {https://doi.org/10.1109/ISSCC.2018.8310393},
  doi          = {10.1109/ISSCC.2018.8310393},
  timestamp    = {Wed, 07 Apr 2021 09:24:21 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/DongWL0SCCBS18.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}