BibTeX record conf/irps/HuangLTWHLLH18

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@inproceedings{DBLP:conf/irps/HuangLTWHLLH18,
  author       = {D. S. Huang and
                  J. H. Lee and
                  Y. S. Tsai and
                  Y. F. Wang and
                  Y. S. Huang and
                  C. K. Lin and
                  Ryan Lu and
                  Jun He},
  title        = {Comprehensive device and product level reliability studies on advanced
                  {CMOS} technologies featuring 7nm high-k metal gate FinFET transistors},
  booktitle    = {{IEEE} International Reliability Physics Symposium, {IRPS} 2018, Burlingame,
                  CA, USA, March 11-15, 2018},
  pages        = {6},
  publisher    = {{IEEE}},
  year         = {2018},
  url          = {https://doi.org/10.1109/IRPS.2018.8353651},
  doi          = {10.1109/IRPS.2018.8353651},
  timestamp    = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl       = {https://dblp.org/rec/conf/irps/HuangLTWHLLH18.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}