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ORCIDSeung-Hyuk Kang
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- affiliation: Qualcomm, San Diego, CA, USA
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2020 – today
- 2021
[j27]Sara Choi
, Hong Keun Ahn, Byungkyu Song, Seung-Hyuk Kang, Seong-Ook Jung:
Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction. IEEE Trans. Circuits Syst. I Regul. Pap. 68(6): 2481-2493 (2021)- [j26]Taehui Na, Seung-Hyuk Kang, Seong-Ook Jung:
STT-MRAM Sensing: A Review. IEEE Trans. Circuits Syst. II Express Briefs 68(1): 12-18 (2021) - [j25]Byungkyu Song, Sehee Lim, Seung-Hyuk Kang, Seong-Ook Jung:
Environmental-Variation-Tolerant Magnetic Tunnel Junction-Based Physical Unclonable Function Cell With Auto Write-Back Technique. IEEE Trans. Inf. Forensics Secur. 16: 2843-2853 (2021)
2010 – 2019
- 2019
- [j24]Byungkyu Song, Sara Choi, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Cancellation Sensing-Circuit-Based Nonvolatile Flip-Flop Operating in Near-Threshold Voltage Region. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(8): 2963-2972 (2019) - [j23]Sara Choi, Hong Keun Ahn, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Decoder for Short BCH Codes With High Decoding Efficiency and Low Power for Emerging Memories. IEEE Trans. Very Large Scale Integr. Syst. 27(2): 387-397 (2019) - [j22]Taehui Na, Byungkyu Song, Sara Choi, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. IEEE Trans. Very Large Scale Integr. Syst. 27(11): 2548-2555 (2019) - 2018
- [j21]Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 65-I(1): 163-174 (2018) - [j20]Linuo Xue, Bi Wu, Beibei Zhang, Yuanqing Cheng, Peiyuan Wang, Chando Park, Jimmy J. Kan, Seung-Hyuk Kang, Yuan Xie:
An Adaptive 3T-3MTJ Memory Cell Design for STT-MRAM-Based LLCs. IEEE Trans. Very Large Scale Integr. Syst. 26(3): 484-495 (2018) - 2017
- [j19]Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS. IEEE J. Solid State Circuits 52(2): 496-504 (2017) - [j18]Byungkyu Song, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area. IEEE Trans. Circuits Syst. II Express Briefs 64-II(6): 700-704 (2017) - 2016
- [j17]Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Read Disturbance Reduction Technique for Offset-Canceling Dual-Stage Sensing Circuits in Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. II Express Briefs 63-II(6): 578-582 (2016) - [j16]Taehui Na, Jisu Kim, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1361-1370 (2016) - [j15]Sara Choi, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(9): 2851-2860 (2016) - [j14]Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Multiple-Cell Reference Scheme for Narrow Reference Resistance Distribution in Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(9): 2993-2997 (2016) - [c13]Ping Chi, Shuangchen Li, Yuanqing Cheng, Yu Lu, Seung-Hyuk Kang, Yuan Xie:
Architecture design with STT-RAM: Opportunities and challenges. ASP-DAC 2016: 109-114 - [c12]Sara Choi, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Area-optimal sensing circuit designs in deep submicrometer STT-RAM. ISCAS 2016: 1246-1249 - [c11]Beomsang Yoo, Taehui Na, Byungkyu Song, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Equalization scheme analysis for high-density spin transfer torque random access memory. ISOCC 2016: 99-100 - 2015
- [j13]Byungkyu Song, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(7): 1776-1784 (2015) - [j12]Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory. IEEE Trans. Circuits Syst. II Express Briefs 62-II(12): 1109-1113 (2015) - [j11]Cong Xu, Yang Zheng, Dimin Niu, Xiaochun Zhu, Seung-Hyuk Kang, Yuan Xie:
Impact of Write Pulse and Process Variation on 22 nm FinFET-Based STT-RAM Design: A Device-Architecture Co-Optimization Approach. IEEE Trans. Multi Scale Comput. Syst. 1(4): 195-206 (2015) - [c10]Taehui Na, Hanwool Jeong, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter. ICECS 2015: 400-403 - [c9]Byungkyu Song, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. ISLPED 2015: 365-370 - 2014
- [j10]Youngdon Jung, Jisu Kim, Kyungho Ryu, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An MTJ-based non-volatile flip-flop for high-performance SoC. Int. J. Circuit Theory Appl. 42(4): 394-406 (2014) - [j9]Jisu Kim, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Split-Path Sensing Circuit for Spin Torque Transfer MRAM. IEEE Trans. Circuits Syst. II Express Briefs 61-II(3): 193-197 (2014) - [j8]Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(12): 3376-3385 (2014) - [j7]Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 22(7): 1620-1624 (2014) - [j6]Jisu Kim, Kyungho Ryu, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies. IEEE Trans. Very Large Scale Integr. Syst. 22(7): 1630-1634 (2014) - [c8]Taehui Na, Kyungho Ryu, Jisu Kim, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
High-performance low-power magnetic tunnel junction based non-volatile flip-flop. ISCAS 2014: 1953-1956 - [c7]Kangho Lee, Jimmy J. Kan, Seung-Hyuk Kang:
Unified embedded non-volatile memory for emerging mobile markets. ISLPED 2014: 131-136 - 2013
- [c6]Wujie Wen, Mengjie Mao, Xiaochun Zhu, Seung-Hyuk Kang, Danghui Wang, Yiran Chen:
CD-ECC: content-dependent error correction codes for combating asymmetric nonvolatile memory operation errors. ICCAD 2013: 1-8 - [c5]Taehui Na, Kyungho Ryu, Jisu Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A comparative study of STT-MTJ based non-volatile flip-flops. ISCAS 2013: 109-112 - 2012
- [j5]Wenqing Wu, Xiaochun Zhu, Seung-Hyuk Kang, Kendrick Yuen, Rob Gilmore:
Probabilistically Programmed STT-MRAM. IEEE J. Emerg. Sel. Topics Circuits Syst. 2(1): 42-51 (2012) - [j4]Jisu Kim, Kyungho Ryu, Seung-Hyuk Kang, Seong-Ook Jung:
A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM). IEEE Trans. Very Large Scale Integr. Syst. 20(1): 181-186 (2012) - [j3]Kyungho Ryu, Jisu Kim, Jiwan Jung, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop. IEEE Trans. Very Large Scale Integr. Syst. 20(11): 2044-2053 (2012) - 2011
- [j2]Jee-Hwan Song, Jisu Kim, Seung-Hyuk Kang, Sei-Seung Yoon, Seong-Ook Jung:
Sensing margin trend with technology scaling in MRAM. Int. J. Circuit Theory Appl. 39(3): 313-325 (2011) - [c4]Peiyuan Wang, Xiang Chen, Yiran Chen, Hai Li, Seung-Hyuk Kang, Xiaochun Zhu, Wenqing Wu:
A 1.0V 45nm nonvolatile magnetic latch design and its robustness analysis. CICC 2011: 1-4 - [c3]Cong Xu, Dimin Niu, Xiaochun Zhu, Seung-Hyuk Kang, Matt Nowak, Yuan Xie:
Device-architecture co-optimization of STT-RAM based memory for low power embedded systems. ICCAD 2011: 463-470 - [c2]Youngdon Jung, Jisu Kim, Kyungho Ryu, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
MTJ based non-volatile flip-flop in deep submicron technology. ISOCC 2011: 424-427 - 2010
- [j1]Jisu Kim, Jee-Hwan Song, Seung-Hyuk Kang, Sei-Seung Yoon, Seong-Ook Jung:
Design Methodologies for STT-MRAM (Spin-Torque Transfer Magnetic Random Access Memory) Sensing Circuits. IEICE Trans. Electron. 93-C(6): 912-921 (2010)
2000 – 2009
- 2009
- [c1]Xia Li, Wei Zhao, Yu Cao, Zhi Zhu, Jooyoung Song, David Bang, Chi-Chao Wang, Seung-Hyuk Kang, Joseph Wang, Matt Nowak, Nick Yu:
Pathfinding for 22nm CMOS designs using Predictive Technology Models. CICC 2009: 227-230
Coauthor Index
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