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2020 – today
- 2024
[j10]Yangyan Lv, Sheng Xie, Guoxuan Qin, Luhong Mao, Ruiliang Song, Naibai Zhang:
A 50Gb/s PAM4 receiver with mid-frequency compensation and decision jitter cancellation. IEICE Electron. Express 21(7): 20240059 (2024)- 2021
- [i1]Heng Xu, Yue Sun, Yangyang Zhu, Xiaohu Wang, Guoxuan Qin:
Statistical Temperature Coefficient Distribution in Analog RRAM Array: Impact on Neuromorphic System and Mitigation Method. CoRR abs/2105.05534 (2021)
2010 – 2019
- 2018
- [j9]Zheng Zhao, Ningyue Jiang, Zhenqiang Ma, Guoxuan Qin:
Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures. Microelectron. Reliab. 91: 194-200 (2018) - 2016
- [j8]Guoxuan Qin, Hao Liu, You Guo, Mengjiao Dang, Jianguo Ma, Zhenqiang Ma
, Tao Luo:
On the performance characterization of silicon MOSFETs on 4° off-axis substrate. IEICE Electron. Express 13(17): 20160634 (2016) - [j7]Guoxuan Qin, Hao Liu, Yanmeng Xu, Mengjiao Dang, Jianguo Ma, Zhenqiang Ma, Xuejiao Chen, Tao Luo:
Characterization of flexible radio-frequency spiral inductors on a plastic substrate. IEICE Electron. Express 13(20): 20160690 (2016) - 2013
- [j6]Guoxuan Qin, Jianguo Ma, Ningyue Jiang, Zhenqiang Ma, Pingxi Ma, Marco Racanelli:
Experimental Characterization of proton Radiated SiGe Power HBTs at Extreme temperatures. J. Circuits Syst. Comput. 22(10) (2013) - [j5]Guoxuan Qin, Guogong Wang, Ningyue Jiang, Jianguo Ma, Zhenqiang Ma:
On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions. Microelectron. Reliab. 53(3): 409-413 (2013) - 2012
- [j4]Guoxuan Qin, Yuexing Yan, Ningyue Jiang, Jianguo Ma, Pingxi Ma, Marco Racanelli, Zhenqiang Ma:
RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures. Microelectron. Reliab. 52(11): 2568-2571 (2012) - 2011
- [j3]Guoxuan Qin, Hao-Chih Yuan, George K. Celler, Weidong Zhou, Jianguo Ma, Zhenqiang Ma:
RF model of flexible microwave single-crystalline silicon nanomembrane PIN diodes on plastic substrate. Microelectron. J. 42(3): 509-514 (2011)
2000 – 2009
- 2009
- [j2]Zetian Mi, Jun Yang, Pallab K. Bhattacharya, Guoxuan Qin, Zhenqiang Ma:
High-Performance Quantum Dot Lasers and Integrated Optoelectronics on Si. Proc. IEEE 97(7): 1239-1249 (2009) - [j1]Donald Y. C. Lie, Jerry Lopez, Jeremy D. Popp, Jason F. Rowland, Guogong Wang, Guoxuan Qin, Zhenqiang Ma:
Highly Efficient Monolithic Class E SiGe Power Amplifier Design at 900 and 2400 MHz. IEEE Trans. Circuits Syst. I Regul. Pap. 56-I(7): 1455-1466 (2009)
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