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Tatsuya Ohguro
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2010 – 2019
- 2018
- [c4]Toru Sugiyama, Kohei Oasa, Yasunobu Saito, Akira Yoshioka, Takuo Kikuchi, Aya Shindome, Tatsuya Ohguro, Takeshi Hamamoto:
Evaluation methodology for current collapse phenomenon of GaN HEMTs. IRPS 2018: 3 - 2015
- [j6]Tatsuya Ohguro, Satoshi Inaba
, Akio Kaneko, Kimitoshi Okano:
Technology of FinFET for High RF and Analog/Mixed-Signal Performance Circuits. IEICE Trans. Electron. 98-C(6): 455-460 (2015) - [c3]Hiroki Sasaki, Ai Mochizuki, Yuki Sugiura, Ryoji Hasumi, Kentaro Eda, Yoshitaka Egawa, Hirofumi Yamashita, Kenji Honda, Tatsuya Ohguro, Hisayo S. Momose, Hiroshi Ootani, Yoshiaki Toyoshima, Tetsuya Asami:
2.2um BSI CMOS image sensor with two layer photo-detector. IMSE 2015: 940302
2000 – 2009
- 2009
- [j5]Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shunsuke Miyamoto:
Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors. IEICE Trans. Electron. 92-C(6): 777-784 (2009) - 2008
- [j4]Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, Gaku Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto:
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. Math. Comput. Simul. 79(4): 1096-1106 (2008) - [c2]Tamio Ikehashi, Takayuki Miyazaki, Hiroaki Yamazaki, Atsushi Suzuki, Etsuji Ogawa, Shinji Miyano, Tomohiro Saito, Tatsuya Ohguro, Takeshi Miyagi, Yoshiaki Sugizaki, Nobuaki Otsuka, Hideki Shibata, Yoshiaki Toyoshima:
An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation. ISSCC 2008: 582-583 - 2005
- [j3]Shizunori Matsumoto, Hiroaki Ueno, Satoshi Hosokawa, Toshihiko Kitamura, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama:
1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation. IEICE Trans. Electron. 88-C(2): 247-254 (2005) - [c1]Youichi Takeda, Dondee Navarro, Shingo Chiba, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto:
MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime. CICC 2005: 827-830 - 2003
- [j2]Nobuyuki Itoh, Tatsuya Ohguro, Kazuhiro Katoh, Hideki Kimijima, Shin-ichiro Ishizuka, Kenji Kojima, Hiroyuki Miyakawa:
Scalable Parasitic Components Model of CMOS for RF Circuit Design. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 86-A(2): 288-298 (2003)
1990 – 1999
- 1999
- [r1]Yasuhiro Katsumata, Tatsuya Ohguro, Kazumi Inoh, Eiji Morifuji, Takashi Yoshitomi, Hideki Kimijima, Hideaki Nii, Toyota Morimoto, Hisayo S. Momose, Kuniyoshi Yoshikawa, Hidemi Ishiuchi, Hiroshi Iwai:
CMOS/BiCMOS Technology. The VLSI Handbook 1999 - 1998
- [j1]Qiuting Huang, Francesco Piazza, Paolo Orsatti, Tatsuya Ohguro:
The impact of scaling down to deep submicron on CMOS RF circuits. IEEE J. Solid State Circuits 33(7): 1023-1036 (1998)
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