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Masaya Nakano
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2020 – today
- 2022
- [j3]Masaya Nakano
, Yoshinobu Kaneda
, Satoru Nakanishi, Yasumitsu Murai, Yosuke Tashiro, Yasuhiko Taito
, Tomoya Ogawa, Hidenori Mitani, Takashi Ito, Takashi Kono:
A 40-nm Embedded SG-MONOS Flash Macro for High-End MCU Achieving 200-MHz Random Read Operation and 7.91-Mb/mm2 Density With Charge-Assisted Offset Cancellation Sense Amplifier. IEEE J. Solid State Circuits 57(10): 3094-3102 (2022) - 2021
- [c3]Masaya Nakano, Yoshinobu Kaneda, Koichi Takeda, Takahiro Shimoi, Yasunobu Aoki, Satoru Nakanishi, Yosuke Tashiro, Yasuhiko Taito, Ken Matsubara, Munekatsu Nakagawa, Tomoya Ogawa, Takashi Kurafuji, Hidenori Mitani, Takashi Ito, Takashi Kono:
A 40nm Embedded SG-MONOS Flash Macro for High-end MCU Achieving 200MHz Random Read Operation and 7.91Mb/mm2 Density with Charge Assisted Offset Cancellation Sense Amplifier. A-SSCC 2021: 1-3
2010 – 2019
- 2019
- [c2]Akihiko Kanda, Takashi Kurafuji, Koichi Takeda, Tomoya Ogawa, Yasuhiko Taito, Kazuo Yoshihara, Masaya Nakano, Takashi Ito, Hiroyuki Kondo, Takashi Kono:
A 24MB Embedded Flash System Based on 28nm SG-MONOS Featuring 240MHz Read Operations and Robust Over-The-Air Software Update for Automotive. VLSI Circuits 2019: 210- - 2016
- [j2]Yasuhiko Taito, Takashi Kono, Masaya Nakano, Tomoya Saito, Takashi Ito, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi:
A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170°C. IEEE J. Solid State Circuits 51(1): 213-221 (2016) - 2015
- [c1]Yasuhiko Taito, Masaya Nakano, Hiromi Okimoto, Daisuke Okada, Takashi Ito, Takashi Kono, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi:
7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°C. ISSCC 2015: 1-3
2000 – 2009
- 2005
- [j1]Kiyohiro Furutani, Takeshi Hamamoto, Takeo Miki, Masaya Nakano, Takashi Kono, Shigeru Kikuda, Yasuhiro Konishi, Tsutomu Yoshihara:
Highly Flexible Row and Column Redundancy and Cycle Time Adaptive Read Data Path for Double Data Rate Synchronous Memories. IEICE Trans. Electron. 88-C(2): 255-263 (2005)
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