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ORCIDErnest Y. Wu
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2020 – today
- 2025
[c15]Ernest Y. Wu, Paul Jamison, Steven Consiglio, Takaaki Tsunomura, Takashi Ando:
Modulating Competition between Defect Generation and Annihilation in Dielectric Breakdown Showing a Full Range of Reverse, Diminishing, and Forward Area Scaling Trends. IRPS 2025: 1-8- [c14]Ernest Y. Wu, Richard G. Southwick, Baozhen Li:
A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO2 and its Comparison with 2D Gate Dielectrics. IRPS 2025: 1-10 - 2024
- [c13]Ernest Y. Wu, Takashi Ando, Paul Jamison:
General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition. IRPS 2024: 1-8 - [c12]Ernest Y. Wu, Brian T. McGowan, Ronald Bolam, Huai Huang, Huimei Zhou, Miaomiao Wang:
A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction. IRPS 2024: 1-9 - [c11]Huimei Zhou, Miaomiao Wang, Ernest Y. Wu:
Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling. IRPS 2024: 2 - 2022
- [c10]Franco Stellari
, Ernest Y. Wu, Martin M. Frank, Leonidas E. Ocala, Takashi Ando, Peilin Song:
Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation. ESSDERC 2022: 293-296 - [c9]Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo:
A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. IRPS 2022: 2 - [c8]Ernest Y. Wu, Baozhen Li:
Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k Dielectrics. IRPS 2022: 10 - 2021
- [c7]Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo:
TDDB Reliability in Gate-All-Around Nanosheet. IRPS 2021: 1-6
2010 – 2019
- 2019
- [c6]Eduard A. Cartier, Wanki Kim, Nanbo Gong, Tayfun Gokmen, Martin M. Frank, Douglas M. Bishop, Youngseok Kim, Seyoung Kim, Takashi Ando, Ernest Y. Wu, Praneet Adusumilli, John Rozen, Paul M. Solomon, Wilfried Haensch, Matthew J. BrightSky, Abu Sebastian, Geoffrey W. Burr, Vijay Narayanan:
Reliability Challenges with Materials for Analog Computing. IRPS 2019: 1-10 - [c5]Andrew Kim, Ernest Y. Wu, Baozhen Li, Barry P. Linder:
Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD. IRPS 2019: 1-5 - [c4]Ernest Y. Wu, Baozhen Li, James H. Stathis, Andrew Kim:
Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications. IRPS 2019: 1-8 - 2018
- [c3]Ernest Y. Wu, Andrew Kim, Baozhen Li, James H. Stathis:
Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications. IRPS 2018: 3 - 2015
- [c2]Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla:
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL). IRPS 2015: 2 - 2013
- [c1]Barry P. Linder, Eduard Cartier, S. Krishnan, Ernest Y. Wu:
Improving and optimizing reliability in future technologies with high-κ dielectrics. VLSI-DAT 2013: 1-4
2000 – 2009
- 2005
- [j5]Ernest Y. Wu, Jordi Suñé:
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability. Microelectron. Reliab. 45(12): 1809-1834 (2005) - 2004
- [j4]Rolf-Peter Vollertsen, Ernest Y. Wu:
Voltage acceleration and t63.2 of 1.6-10 nm gate oxides. Microelectron. Reliab. 44(6): 909-916 (2004) - 2003
- [j3]Ernest Y. Wu, Jordi Suñé, Wing L. Lai, Alex Vayshenker, Edward J. Nowak, David L. Harmon:
Critical reliability challenges in scaling SiO2-based dielectric to its limit. Microelectron. Reliab. 43(8): 1175-1184 (2003) - [j2]Jordi Suñé, Ernest Y. Wu, David Jiménez, Wing L. Lai:
Statistics of soft and hard breakdown in thin SiO2 gate oxides. Microelectron. Reliab. 43(8): 1185-1192 (2003) - 2002
- [j1]Ernest Y. Wu, Edward J. Nowak, Alex Vayshenker, Wing L. Lai, David L. Harmon:
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics. IBM J. Res. Dev. 46(2-3): 287-298 (2002)
Coauthor Index
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