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ORCIDMasaru Sato 0001
Person information
- affiliation: Fujitsu Laboratories, Atsugi, Japan
- affiliation: Georgia Institute of Technology, Atlanta, GA, USA
- affiliation (PhD 2014): Tokyo Institute of Technology, Tokyo, Japan
Other persons with the same name
- Masaru Sato — disambiguation page
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2020 – today
- 2024
[c6]Takuma Kinoshita, Yuki Shinhama, Masaru Sato, Futoshi Kuroki:
An X-band Spatial Power Combining Using Rectangular Waveguide with Dielectric Lens. RWS 2024: 122-125- 2023
- [j13]Masaru Sato, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe:
Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier. IEICE Trans. Electron. 106(10): 605-613 (2023) - [j12]Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki:
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Trans. Electron. 106(11): 661-668 (2023) - 2021
- [j11]Masaru Sato, Yoshitaka Niida, Atsushi Yamada, Junji Kotani, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura:
Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers. IEICE Trans. Electron. 104-C(10): 480-487 (2021)
2010 – 2019
- 2019
- [j10]Shinpei Yamashita, Michihiko Suhara, Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto, Kiyoto Asakawa:
Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz. IEICE Trans. Electron. 102-C(6): 462-465 (2019) - [c5]Tsuyoshi Takahashi, Kenichi Kawaguchi, Masaru Sato, Michihiko Suhara, Naoya Okamoto:
Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves. ESSDERC 2019: 214-217 - 2017
- [j9]Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin:
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Trans. Electron. 100-C(5): 417-423 (2017) - 2016
- [j8]Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara:
300-GHz Amplifier in 75-nm InP HEMT Technology. IEICE Trans. Electron. 99-C(5): 528-534 (2016) - 2015
- [j7]Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara:
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. IEICE Trans. Electron. 98-C(12): 1112-1119 (2015) - 2014
- [j6]Kazukiyo Joshin, Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Yoshitaka Niida, Masaru Sato, Satoshi Masuda, Keiji Watanabe:
Millimeter-Wave GaN HEMT for Power Amplifier Applications. IEICE Trans. Electron. 97-C(10): 923-929 (2014) - 2013
- [c4]Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara:
Submillimeter-wave InP HEMT amplifiers with current-reuse topology. RWS 2013: 250-252 - 2012
- [j5]Ning Li, Keigo Bunsen
, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Yoichi Kawano, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa:
A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 95-A(2): 498-505 (2012) - 2010
- [c3]Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa:
A 24 dB gain 51-68 GHz CMOS low noise amplifier using asymmetric-layout transistors. ESSCIRC 2010: 342-345
2000 – 2009
- 2009
- [j4]Masaru Sato, Tatsuya Hirose, Koji Mizuno:
Advanced MMIC Receiver for 94-GHz Band Passive Millimeter-Wave Imager. IEICE Trans. Electron. 92-C(9): 1124-1129 (2009) - [c2]Yoichi Kawano, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin:
A 77GHz transceiver in 90nm CMOS. ISSCC 2009: 310-311 - 2008
- [c1]Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin:
60 and 77GHz Power Amplifiers in Standard 90nm CMOS. ISSCC 2008: 562-563 - 2005
- [j3]Yusuke Inoue, Masaru Sato, Toshihiro Ohki, Kozo Makiyama, Tsuyoshi Takahashi, Hisao Shigematsu, Tatsuya Hirose:
A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique. IEEE J. Solid State Circuits 40(10): 2098-2103 (2005) - 2002
- [j2]Hisao Shigematsu, Masaru Sato, Tatsuya Hirose, Yuu Watanabe:
A 54-GHz distributed amplifier with 6-VPP output for a 40-Gb/s LiNbO3 modulator driver. IEEE J. Solid State Circuits 37(9): 1100-1105 (2002) - 2001
- [j1]Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, Yuu Watanaba:
A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs. IEEE J. Solid State Circuits 36(9): 1309-1313 (2001)
Coauthor Index
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