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Tahui Wang
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Books and Theses
- 1986
- [b1]Tahui Wang:
Theoretical Studies of Electronic Transport in Gallium-Arsenide Material and Devices Using an Ensemble Monte Carlo Method (Modeling). University of Illinois Urbana-Champaign, USA, 1986
Journal Articles
- 2008
- [j4]M. H. Lin, M. T. Lin, Tahui Wang:
Effects of length scaling on electromigration in dual-damascene copper interconnects. Microelectron. Reliab. 48(4): 569-577 (2008) - 2007
- [j3]M. H. Lin, K. P. Chang, K. C. Su, Tahui Wang:
Effects of width scaling and layout variation on dual damascene copper interconnect electromigration. Microelectron. Reliab. 47(12): 2100-2108 (2007) - 2005
- [j2]M. H. Lin, Y. L. Lin, K. P. Chang, K. C. Su, Tahui Wang:
Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment. Microelectron. Reliab. 45(7-8): 1061-1078 (2005) - 1993
- [j1]Tahui Wang, Sheng-Jyh Wu, Chimoon Huang:
Device and circuit simulation of anomalous DX trap effects in DCFL and SCFL HEMT inverters. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(11): 1758-1761 (1993)
Conference and Workshop Papers
- 2022
- [c4]H.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, Kuo-Yu Hsiang, C.-P. Chuu, Y.-W. Chen, X. W. Zhang, C. W. Liu, Tahui Wang, C. C. Wang, Min-Hung Lee, M.-F. Chang, C.-S. Chang, T. C. Chen:
Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array. VLSI Technology and Circuits 2022: 361-362 - 2018
- [c3]P. C. Su, C. M. Jiang, C. W. Wang, Tahui Wang:
Correlation between SET-state current level and read-disturb failure time in a resistive switching memory. IRPS 2018: 1 - [c2]T. W. Lin, S. H. Ku, C. H. Cheng, C. W. Lee, Ijen Huang, Wen-Jer Tsai, T. C. Lu, W. P. Lu, K. C. Chen, Tahui Wang, Chih-Yuan Lu:
Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory. IRPS 2018: 6-1 - [c1]Y. H. Liu, H. Y. Lin, C. M. Jiang, Tahui Wang, W. J. Tsai, T. C. Lu, K. C. Chen, Chih-Yuan Lu:
Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method. IRPS 2018: 6
Coauthor Index
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