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Donato Francesco Falcone
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2020 – today
- 2024
- [c6]Davide G. F. Lombardo, Mamidala Saketh Ram, Tommaso Stecconi, Wooseok Choi, Antonio La Porta, Donato Francesco Falcone, Bert J. Offrein, Valeria Bragaglia:
Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOx ReRAM Devices. DRC 2024: 1-2 - 2023
- [c5]Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Antonio La Porta, Ludovico Carraria-Martinotti, Bert Jan Offrein, Valeria Bragaglia:
Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM. IMW 2023: 1-4 - [i1]Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein:
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor. CoRR abs/2309.12070 (2023) - 2022
- [j1]Laura Bégon-Lours, Mattia Halter, Marilyne Sousa, Youri Popoff, Diana Dávila Pineda, Donato Francesco Falcone, Zhenming Yu, Steffen Reidt, Lorenzo Benatti, Francesco Maria Puglisi, Bert Jan Offrein:
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights. Neuromorph. Comput. Eng. 2(2): 24001 (2022) - [c4]Tommaso Stecconi, Youri Popoff, Roberto Guido, Mattia Halter, Donato Francesco Falcone, Antonio La Porta, Folkert Horst, Laura Bégon-Lours, Marilyne Sousa, Bert J. Offrein, Valeria Bragaglia:
Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states. DRC 2022: 1-2 - [c3]Tommaso Stecconi, Youri Popoff, Roberto Guido, Donato Francesco Falcone, Mattia Halter, Marilyne Sousa, Folkert Horst, Antonio La Porta, Bert J. Offrein, Valeria Bragaglia:
Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM. ESSDERC 2022: 297-300 - 2021
- [c2]Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein:
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor. ESSCIRC 2021: 87-90 - [c1]Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein:
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor. ESSDERC 2021: 87-90
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last updated on 2024-09-02 01:04 CEST by the dblp team
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