BibTeX records: Akio Sugahara

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@article{DBLP:journals/jssc/KouchiKKSIKTBKK21,
  author    = {Toshiyuki Kouchi and
               Mami Kakoi and
               Noriyasu Kumazaki and
               Akio Sugahara and
               Akihiro Imamoto and
               Yasufumi Kajiyama and
               Yuri Terada and
               Sanad Bushnaq and
               Naoaki Kanagawa and
               Takuyo Kodama and
               Ryo Fukuda and
               Hiromitsu Komai and
               Norichika Asaoka and
               Hidekazu Ohnishi and
               Ryosuke Isomura and
               Takaya Handa and
               Kensuke Yamamoto and
               Yuki Ishizaki and
               Yoko Deguchi and
               Atsushi Okuyama and
               Junichi Sato and
               Hiroki Yabe and
               Cynthia Hsu and
               Masahiro Yoshihara},
  title     = {A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the
               Random Read Latency With tProg = 75 {\(\mu\)}s and tR = 4 {\(\mu\)}s},
  journal   = {{IEEE} J. Solid State Circuits},
  volume    = {56},
  number    = {1},
  pages     = {225--234},
  year      = {2021},
  url       = {https://doi.org/10.1109/JSSC.2020.3028393},
  doi       = {10.1109/JSSC.2020.3028393},
  timestamp = {Sat, 09 Jan 2021 00:00:00 +0100},
  biburl    = {https://dblp.org/rec/journals/jssc/KouchiKKSIKTBKK21.bib},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}

@inproceedings{DBLP:conf/isscc/HiguchiKKFTATSM21,
  author    = {Tsutomu Higuchi and
               Takuyo Kodama and
               Koji Kato and
               Ryo Fukuda and
               Naoya Tokiwa and
               Mitsuhiro Abe and
               Teruo Takagiwa and
               Yuki Shimizu and
               Junji Musha and
               Katsuaki Sakurai and
               Jumpei Sato and
               Tetsuaki Utsumi and
               Kazuhide Yoneya and
               Yasuhiro Suematsu and
               Toshifumi Hashimoto and
               Takeshi Hioka and
               Kosuke Yanagidaira and
               Masatsugu Kojima and
               Junya Matsuno and
               Kei Shiraishi and
               Kensuke Yamamoto and
               Shintaro Hayashi and
               Tomoharu Hashiguchi and
               Kazuko Inuzuka and
               Akio Sugahara and
               Mitsuaki Honma and
               Keiji Tsunoda and
               Kazumasa Yamamoto and
               Takahiro Sugimoto and
               Tomofumi Fujimura and
               Mizuki Kaneko and
               Hiroki Date and
               Osamu Kobayashi and
               Takatoshi Minamoto and
               Ryoichi Tachibana and
               Itaru Yamaguchi and
               Juan Lee and
               Venky Ramachandra and
               Srinivas Rajendra and
               Tianyu Tang and
               Siddhesh Darne and
               Jiwang Lee and
               Jason Li and
               Toru Miwa and
               Ryuji Yamashita and
               Hiroshi Sugawara and
               Naoki Ookuma and
               Masahiro Kano and
               Hiroyuki Mizukoshi and
               Yuki Kuniyoshi and
               Mitsuyuki Watanabe and
               Kei Akiyama and
               Hirotoshi Mori and
               Akira Arimizu and
               Yoshito Katano and
               Masakazu Ehama and
               Hiroshi Maejima and
               Koji Hosono and
               Masahiro Yoshihara},
  title     = {30.4 {A} 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology},
  booktitle = {{IEEE} International Solid-State Circuits Conference, {ISSCC} 2021,
               San Francisco, CA, USA, February 13-22, 2021},
  pages     = {428--430},
  publisher = {{IEEE}},
  year      = {2021},
  url       = {https://doi.org/10.1109/ISSCC42613.2021.9366003},
  doi       = {10.1109/ISSCC42613.2021.9366003},
  timestamp = {Sat, 13 Mar 2021 00:00:00 +0100},
  biburl    = {https://dblp.org/rec/conf/isscc/HiguchiKKFTATSM21.bib},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}

@inproceedings{DBLP:conf/isscc/KouchiKYBKIDSIA20,
  author    = {Toshiyuki Kouchi and
               Noriyasu Kumazaki and
               Masashi Yamaoka and
               Sanad Bushnaq and
               Takuyo Kodama and
               Yuki Ishizaki and
               Yoko Deguchi and
               Akio Sugahara and
               Akihiro Imamoto and
               Norichika Asaoka and
               Ryosuke Isomura and
               Takaya Handa and
               Junichi Sato and
               Hiromitsu Komai and
               Atsushi Okuyama and
               Naoaki Kanagawa and
               Yasufumi Kajiyama and
               Yuri Terada and
               Hidekazu Ohnishi and
               Hiroki Yabe and
               Cynthia Hsu and
               Mami Kakoi and
               Masahiro Yoshihara},
  title     = {13.5 {A} 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve
               Random Read Latency with tPROG=75{\(\mathrm{\mu}\)}s and tR=4{\(\mathrm{\mu}\)}s},
  booktitle = {2020 {IEEE} International Solid- State Circuits Conference, {ISSCC}
               2020, San Francisco, CA, USA, February 16-20, 2020},
  pages     = {226--228},
  publisher = {{IEEE}},
  year      = {2020},
  url       = {https://doi.org/10.1109/ISSCC19947.2020.9063154},
  doi       = {10.1109/ISSCC19947.2020.9063154},
  timestamp = {Sat, 18 Apr 2020 17:41:44 +0200},
  biburl    = {https://dblp.org/rec/conf/isscc/KouchiKYBKIDSIA20.bib},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}