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Maxim G. Drosdetsky

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2018
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Gennady I. Zebrev, Vasily V. Orlov, Maxim S. Gorbunov, Maxim G. Drosdetsky:
Physics-based modeling of TID induced global static leakage in different CMOS circuits. Microelectron. Reliab. 84: 181-186 (2018)

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